3.3kV to 6.5kV IGBT Module Platform for Compact Inverters

Infineon Technologies AG has extended its portfolio of high voltage devices with a new IGBT module platform for high-power applications, the XHP™ 3. This platform is for high-power applications in the voltage range from 3.3kV up to 6.5kV. The company says that the module offers best-in-class reliability and highest power density. (See the XHP 3 on the right above next to the soon-to-be-released XHP 2).

Its low stray inductance and symmetrical design give the platform significantly improved switching behavior. For this reason, the XHP 3 platform provides a solution for demanding applications such as traction and commercial, construction and agricultural vehicles as well as medium-voltage drives.

Infineon will showcase the XHP 3 high-power platform at PCIM Europe 2019.

Infineon's XHP 3 package measures 140mm in length, 100mm in width and 40mm in height. The first IGBT modules of this new high-power platform feature a half bridge topology with a blocking voltage of 3.3kV and a nominal current of 450A.

XHP 3 IGBT package

In order to meet customers' demands, the company launched two different isolation classes simultaneously; 6kV (FF450R33T3E3) and 10.4kV (FF450R33T3E3_B5) isolation, respectively. Ultrasonically welded terminals, an aluminum silicon carbide baseplate, and aluminum nitride substrates ensure the highest level of reliability and robustness.

The high-power IGBT module is designed for paralleling and, therefore, offers a new level of scalability. The IGBT is easily adaptable to the desired power level by paralleling the required number of XHP 3 modules.

The company offers pre-grouped devices to facilitate scaling. These devices feature a matched set of static and dynamic parameters. With these grouped modules, de-rating is no longer required when paralleling up to eight XHP 3 devices.

Features of XHP 3 IGBT Platform

• Designed for applications with 3.3kV or 6.5kV
• Half-bridge configuration for best performance
• Modular approach and wide scalability with high current density
• Optimal arrangement of main and auxiliary terminals
• Available with 6kV and 10.4kV isolation, respectively
• High DC stability
• High short-circuit capability
• Low switching losses
• Low Vcesat 
• Unbeatable robustness
• Tvjop =150°C
• Vcesat with positive temperature coefficient
• AlSiC base plate for increased thermal cycling capability
• Package with CTI > 600
• Isolated base plate

Benefits

• One, high-power platform offering flexibility and scalability
• High power density and optimized frame sizes
• High reliability and long service life
• Reduced system cost
• Low inductance

Availability

The XHP 3, 3.3kV IGBT modules can be ordered now.

Infineon at the PCIM 2019

At the PCIM 2019 tradeshow, Infineon is showcasing innovative product-to-system solutions for applications that are ready to power the world and shape the future. Infineon will present its demos at booth #313 in hall 9 (Nuremberg, Germany, 7-9 May 2019).