New Industry Products

25V MOSFET with High SOA and Low RDS(on) for Hot-Swap

March 21, 2019 by Scott McMahan

Alpha and Omega Semiconductor Limited (AOS) introduced at the 2019 Applied Power Electronics Conference (APEC) in Anaheim, CA the AONS32100. This new device delivers low RDS(on) with a high Safe Operating Area (SOA) capabilities ideally suited for demanding applications such as hot swap and effuse. A high SOA is crucial in server hot swap applications where the MOSFET needs to be robust to manage the high in-rush current effectively.

Applications for the MOSFET include high-performance o-ring, e-fuse, and ultra high current battery charge/discharge.

According to AOS, AONS32100 delivers the best in class robustness for a 25V MOSFET in a DFN, 5mm x 6mm package. The new device has a maximum RDS(on) of 0.73mΩ at an applied Gate-Source Voltage equal to 10Vgs. Under the SOA measurement condition of 12V and on for 25ms, the AONS32100 maximum current is 22A, which is significantly higher than the previous generation.

"High reliability and availability are essential metrics in the server infrastructure. The Hot Swap MOSFET is one of the critical components that must be robust and reliable to meet customer demands. AONS32100 has strong SOA with low on-resistance to meet these requirements for hot swap applications," said Peter H. Wilson, Marketing Director of MOSFET product line at AOS.

Description and Summary

Trench Power MOSFET technology
Low RDS(on)
Low Gate Charge
High Current Capability
Vds=25V
ID (at Vgs=10V) 400A
RDS(on) (at Vgs=10V) < 0.73mΩ
RDS(on) (at Vgs=4.5V) < 1.08mΩ
RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested

Pricing and Availability

The AONS32100 is immediately available in production quantities with a lead-time of 16 weeks. The unit price for 1,000 pieces is $1.26.