Vishay Intertechnology, Inc. (Malvern, PA) has announced that it is sampling the industry's first power MOSFETs in a leadless, 1206 surface-mount package with a total footprint of 3.05mm by 1.80mm. The new Vishay Siliconix ChipFET power MOSFETs occupy approximately half the board area required by a leaded TSOP-6. This specification allows designers to reduce the power management circuitry for cell phones and notebook computers into about half the space previously needed. Vishay claims that the performance improvements with the new ChipFETs will be significant as well. The on-resistance in the 1206 ChipFETs has been reduced by as much as 35 percent and power dissipation has been increased by as much as 25 percent in comparison with the TSOP-6 power MOSFETs. For example, the on-resistance for the single n-channel Si5404DC is just 30 milliohms max, with power dissipation of 2.5W. Typical applications for the new ChipFETs will include load switching, low-power dc/dc conversion, battery switching, and lithium-ion battery protection circuits. The new ChipFETs are available in an initial product offering of 10 devices in the 8-pin 1206 package. They are available in 8V, 20V and 30V versions with operating voltages as low as 1.8V. Both single and dual devices, including a dual n- and p-channel MOSFET in the same package, are available.