Components

1200V Modules Handle up to 50A for Industrial Motor Drive Applications

ON Semiconductor has announced the NXH25C120L2C2, NXH35C120L2C2/2C2E, and NXH50C120L2C2E, which are 25A, 35A, and 50A versions of transfer-molded power integrated modules (TM-PIM) for 1200V applications.  They are available in converter-inverter-brake (CIB) and converter-inverter (CI) configurations.  The modules consist of six 1200V IGBTs, six 1600V rectifiers, and an NTC thermistor for system level temperature monitoring; the CIB versions use an additional 1200V IGBT coupled with a diode.

The NXH25C120L2C2SG is a transfer−molded power module containing a converter−inverter−brake circuit consisting of six 25A, 1600V rectifiers, six 25A, 1200V IGBTs with inverse diodes, one 25A, 1200V brake IGBT with brake diode and an NTC thermistor.

The NXH35C120L2C2SG is a transfer−molded power module containing a converter−inverter−brake circuit consisting of six 35A, 1600V rectifiers, six 35A, 1200V IGBTs with inverse diodes, one 35A, 1200V brake IGBT with brake diode and an NTC thermistor. The NXH35C120L2C2S1G is a transfer−molded power module containing a converter−inverter circuit consisting of six 35A, 1600V rectifiers, six 35A, 1200V IGBTs with inverse diodes, and an NTC thermistor.

The NXH35C120L2C2ESG is a transfer−molded power module containing a converter−inverter−brake circuit consisting of six 35A, 1600V rectifiers, six 35A, 1200V IGBTs with inverse diodes, one 35A, 1200V brake IGBT with brake diode and an NTC thermistor.

The NXH50C120L2C2ESG is a transfer−molded power module containing a converter−inverter−brake circuit consisting of six 50A, 1600V rectifiers, six 50A, 1200V IGBTs with inverse diodes, one 35A, 1200V brake IGBT with brake diode and an NTC thermistor. The NXH50C120L2C2ES1G is a transfer−molded power module containing a converter−inverter−brake circuit consisting of six 50A, 1600V rectifiers, six 50A, 1200V IGBTs with inverse diodes and an NTC thermistor.

The new modules feature transfer-molded encapsulation, extending the cycling lifetime for both temperature and power.  The modules measure just 73 x 40 x 8 mm, have solderable pins, and have a standardized pin-out for CIB and CI versions.

The company also announced the NFAM2012L5B and NFAL5065L4B, expanding its Intelligent Power Module (IPM) portfolio, which includes voltage ratings of 650V and 1200V, and current ratings from 10A to 75A.  These 3-phase inverters – with integrated short circuit rated Trench IGBTs, fast recovery diode, gate driver, bootstrap circuits, optional NTC thermistor, and protection – provide compact, reliable modules with UL 1557 certification via an isolation rating of 2500 Vrms / minute. These IPMs feature direct bonding copper substrate and low loss silicon, enhancing power cycling lifetime and thermal dissipation.

ON Semiconductor Corp.
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