Addressing the fast-growing demand for Silicon Carbide (SiC) solutions, Infineon Technologies AG has launched new devices in the 1200V CoolSiC™ MOSFET family. The CoolSiC Easy 2B power modules enable engineers to reduce system costs by increasing power density.
In addition, they can also lower operational costs significantly. Owing to about 80% lower switching losses compared to silicon IGBTs, inverter efficiency levels exceeding 99% can be reached. Because of the specific SiC properties, the same or even higher switching-frequency operation can be realized. This is particularly attractive for fast switching applications such as UPS and energy storage.
The Easy 2B standard package for power modules is characterized by an industry-leading low stray inductance. With a variety of half-bridge, six-pack and booster modules, Infineon offers the largest SiC portfolio in the Easy package on the market. The half-bridge configuration of the CoolSiC Easy 2B can easily be used for building up four- and six-pack-topologies.
The new device widens the power range of modules in half-bridge topology with an on-resistance (RDS(on)) per switch to only 6mΩ. This is a benchmark performance for devices in Easy 2B housing.
Additionally, the integrated body diode of the CoolSiC MOSFET chip ensures a low-loss freewheeling function without the need for another diode chip. While the NTC temperature sensor facilitates the monitoring of the device, the PressFIT technology reduces assembly time for mounting the device.
The CoolSiC MOSFET Easy 2B modules are available now. Just recently, Infineon launched the first CoolSiC™ MOSFET six-pack module in the well-established Easy 1B package with an RDS(on) of 45mΩ.