GaN-on-Si 10W Fully-matched, Two-stage PA Features 40% Efficiency

MACOM has introduced a broadband, multistage GaN-on-Si power amplifier module with flexible mounting options. The company optimized the new MAMG-100227-010 broadband PA module for use in land mobile radio (LMR) systems, wireless public safety communications, and military tactical communications, as well as military electronic countermeasures (ECM). The MAMG-100227-010 PAs are now available to customers.

The new MAMG-100227-010 uses high-performance MACOM GaN-on-Si technology to achieve the extremely wide frequency bandwidth of 225MHz to 2600 MHz, with 10W CW output power. The amplifier features 40% typical power added efficiency (PAE) over the band and provides 22 dB typical power gain. The PA can be operated at up to 36V with 28V operation typical.

A compact 14mm by 18mm air-cavity laminate package with integrated gold-plated copper heatsink houses the power amp. According to MACOM, the power amp can eliminate the need for additional components and it can reduce the PCB space required for unmatched PA architectures with its top and bottom accessibility for improved mounting and heatsinking agility.

Functional Schematic

The design combines the efficiencies of a fully-matched (50Ω), two-stage PA architecture with top-side and bottom-side mounting options. According to MACOM, the MAMG-100227-010 can enable unprecedented design flexibility for radios balancing stringent size, weight and power (SWaP) specifications.

"The MAMG-100227-010 builds on MACOM's rich legacy of providing high-performance GaN-on-Si solutions with field-proven reliability," said Mark Murphy, Senior Director of Marketing, RF Power and Basestation, MACOM. "For customers seeking exceptional design flexibility, the MAMG-100227-010 exemplifies the design and application expertise that MACOM provides across a wide range of broadband frequencies and power levels."

For more information about the MAMG-100227-010, please visit https://www.macom.com/products/product-detail/MAMG-100227-010C0L.

Features

• Compact Size (14mm x 18mm2)
• GaN-on-Si Technology
• CW Output Power >10W, 40% PAE and 22dB Power Gain
• Lead-Free Package with Heat Sink
• RoHS* Compliant

Specifications

• Supply Voltage: 28V
• PSAT: 10W
• Gain: 22dB
• Test Freq: 2.6GHz