Efficient Power Conversion (EPC) announced the EPC2052, a 100V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74A pulsed output current for high-efficiency power conversion in a 2.25mm2 footprint.
Applications benefiting from this performance, small size, and low cost include 48V input power converters for computing and telecom systems, motor drives, LiDAR, LED lighting, and Class-D audio.
The EPC2052 GaN transistor measures just 1.50mm x 1.50mm (2.25mm2 ). Despite the small footprint, operating in a 48V to 12V buck converter, the EPC2052 achieves greater than 97% efficiency at a 10A output while switching at 500kHz and greater than 96% at a 10A output while switching at 1MHz enabling significant system size reductions.
In addition, EPC says that the low cost of the EPC2052 brings the performance of GaN FETs at a price comparable to silicon MOSFETs.
“The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon. The 100V EPC2052 is significantly smaller than the closest silicon MOSFET and the high-frequency operation allows even further space savings opportunities to designers,” said Alex Lidow, EPC’s CEO.
The EPC9092 development board is a 100V maximum device voltage, half bridge featuring the EPC2052, and the LMG1205 gate driver from Texas Instruments. This 2in x 2in (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all crucial components for easy evaluation of the 100V EPC2052 eGaN FET.
Price and Availability
At quantities of 1K units, the EPC2052 eGaN FET is priced at $0.68 each and $0.54 in 100K volumes, and the EPC9092 development board is priced at $118.75 each.