News

0.18-micron 100V High-Voltage BCD Process

June 01, 2015 by Jeff Shepard

MagnaChip Semiconductor Corporation announced today that it now offers a new premium 0.18 micron Bipolar-CMOS-DMOS (BCD) 100V high-voltage process. This new process features operability up to 100V for various applications that include dc-dc converters, Power-over-Ethernet, LED drivers, motor drivers, audio amps and PMICs. The 0.18-micron 100V BCD process is compatible with standard CMOS processes and uses high density logic devices (1.8V) and high performance analog devices (5V). Utilizing MagnaChip's proprietary deep-trench isolation technology and high voltage LDMOS device optimization, 100V operation LDMOS can be implemented on conventional silicon substrates without using more expensive SOI substrates thereby providing a more cost effective solution to foundry customers.

The new process also supports non-volatile memory (NVM) storage technologies such as electrical fuse, OTP (one time programmable memory) and MTP (multiple time programmable memory). Another added feature is that this new process will also support option devices such as Tantalum Nitride thin film resistor, copper wire bonding, thick top metal and redistribution layer process options.

"We are very pleased to offer our 0.18um 100V BCD process solution that combines high-performance and cost efficiency at the same time," said YJ Kim, MagnaChip's Chief Executive Officer. "In addition to 100V BCD, MagnaChip will continue to enhance the BCD portfolio from 30V~200V, targeting multiple expanding markets such as mobile, consumer, communication, industrial and automotive."