Zetex plc (UK) announced the first offerings from its projected range of new-generation n-channel devices. Manufactured on Zetex’s ZXMN Series advanced trench MOSFET platform, the new ZXMN3A01F is housed in an SOT-23 package. It is rated at 30V and has a continuous drain current of 2.5A. Typical on-resistance is 90mOhms at 10V and 145mOhms at 4.5V. The device has a typical gate charge of 2.3nC. Similarly, the MSOP-8-packaged ZXMN3A02X8 has a typical on-resistance of 18mOhms at 10V and 25mOhms at 4.5V. Its typical gate charge is 14.5nC.
Both of Zetex’s new package variants can be driven by low-voltage sources. The devices are suitable for use in low-power dc/dc converters, dc motor drives, power management and low-voltage switching applications. The company plans to continue expanding to its new generation of trench MOSFETs throughout the year. Future devices will include 20V, 60V and 100V versions in a variety of surface-mount packages.
