WIN Semiconductors Corp., the largest pure-play compound semiconductor foundry, has developed an advanced GaAs PIN diode MMIC process for high frequency switch and monolithic power limiter applications. Fabricated on 150mm semi-insulating GaAs wafers, the 3µm i-layer PIN diodes offer several performance advantages including near constant junction capacitance through 50 GHz, low insertion loss, and excellent isolation required for high frequency applications.
At the same time, WIN has expanded its IP3M high-voltage integrated passive device process to include matching networks for 28V (IP3M-00) and 50V (IP3M-01) applications.The IP3M process provides high quality factor circuit elements combined with humidity ruggedness required for use in low-cost plastic packages.
The flexible IP3M passive circuit platform provides three metal interconnect layers and high breakdown voltage capacitors needed to support reliable operation at 28V and 50V. These high quality passive elements are formed in a humidity robust architecture utilizing silicon nitride and multilayer low-k dielectric films. This process approach provides excellent resistance to humidity ingression at the high bias voltages used in GaN hybrid power amplifiers. The moisture resistance provided by IP3M enables passive networks compatible with 28V or 50V bias in non-hermetic plastic packages.
The PIN3-00 GaAs PIN diode MMIC process uses a humidity robust architecture with low-k dielectric crossovers, and three interconnect metal layers with up to 7µm thick Au metallization for high Q-factor passive elements. Standard through-wafer vias enable flexible ground connections and optional RF hot via supports placement of RF ports on the backside of the MMIC.
“This advanced PIN diode MMIC fabrication process offers significant design flexibility for multiple applications and end-markets. The PIN3-00 process can be used for receive path limiters in Radar Tx/Rx modules, power switching as well as high frequency 5G switch functions. WIN is the first compound semiconductor foundry to offer this high performance technology on 150mm wafers, and at the scale required for high volume markets,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp.
"The IP3M integrated passive device platform is fabricated on 150mm semi-insulating GaAs wafers, and targets high voltage applications that require cost effective high-Q matching networks," David Danzilio. "The new IP3M-00 and IP3M-01 employ the same three-metal platform that uses low-k dielectric cross overs for compact design rules, and high resistance to moisture ingression at the voltage levels commonly used by GaN technology."
This IP3M process provides up to 7µm thick Au metallization with through-wafer vias for flexible ground connections. Additionally, IP3M allows layout flexibility for customers to optimize inductor quality factor, power combining and bond-pad arrangement to match a wide array of power cells in a multitude of package styles and environments.