Ultra-Fast Switching with 1200V SiC Schottky

IXYS Corporation announced today the availability of the DCG45X1200NA and the DCG130X1200NA, both dual 1200V rated SiC Schottky diodes in MiniBLOC™ (SOT-227) package, which are fully isolated. The DCG45X1200NA and the DCG130X1200NA both offer two SiC Schottky diodes with an average forward current of 2 x 22 Amps and 2 x 65 Amps, respectively at 80 degrees C case temperature and essentially zero forward and reverse recovery.

The reduced turn on and turn off losses of the diodes and the related switches results in higher power efficiency. The positive temperature coefficient of the forward voltage drop makes it easy to parallel devices for higher output power. The MiniBLOC package of the new products uses an advanced isolation structure with an optimized low thermal resistance.

Lower dynamic losses and reduced thermal impedance allow for reduction of system size because of higher power density and switching frequency. Added benefits are an increase in reliability because of a lower die temperature swing in cycling power demand.

“With these new products we are expanding our fast diode portfolio and enable applications with higher power in switching and control for inverters, UPSs and rapid charger solutions,” states Dr. Elmar Wisotzki, Director of Technology for IXYS Germany. “Our SiC schottky portfolios give our customers more flexibility in choosing the right product for their application to improve efficiency at best performance-over-cost ratio. The SOT-227 package is a good match with our standard Power MOSFETs and IGBTs, enabling a low profile and high power density design.”

The diodes inside the package are electrically isolated from each other, allowing the designer to connect them either in parallel and build common cathode or phase leg configurations.

Typical applications are high-efficiency dc-dc converters, power inverters, uninterruptible power supply (UPS) systems, high performance power supplies, welding equipment and rapid-charger solutions.

IXYS Corp.
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