Toshiba Corporation has launched a low-on-resistance, low-leakage power MOSFET using the latest trench MOS process as an addition to the MOSFET lineup for automotive applications. The new product, “TK100S04N1L”, achieves low on-resistance with a combination of the latest 8th generation trench MOS process “U-MOS VIII-H series” chip and the “DPAK+” package that utilizes Cu (copper) connectors.
The product is primarily suited for automotive applications, especially for those demanding high-speed switching, such as motor drives and switching regulators. These 40V/100A n-channel MOSFETs feature a typical Rds(on) of 1.9mΩ (VGS=10V) and a leakage current (IDSS) of 10µA (max) (VDS=rated voltage). The “DPAK+” package contributes to the low-on-resistance by utilizing Cu connectors. Tch is guaranteed at 175°C.
Samples are available now with mass production scheduled to start in March 2013.