Toshiba Electronics Europe (TEE) has launched a new low-resistance dual N-channel MOSFET for power management applications in mobile devices. The SSM6N58NU MOSFET meets the needs of high current as well as wireless charging circuits used in smartphones, tablets and laptops. As the battery capacity of mobile devices increases, there is a need for devices that support increased charging currents and frequencies to keep charging times to a minimum.
The SSM6N58NU meets these needs with a maximum DC drain current (ID) of 4A and maximum pulsed drain current (IDP) of 10A. Furthermore, because the gate charge and capacitance of the MOSFET is significantly reduced, fast switching is supported. The N-channel MOSFET ensures efficiency and switching speeds through a design that minimizes ON resistance (RDS(ON)) and input capacitance (CISS). Input capacitance is as low as 129pF, while RDS(ON) measures 67mÎ© at VGS=4.5V.
This enables low loss and high speed operation with a turn-on time (ton) of 26ns, and a turn-off time (toff) of 9ns. The low gate charge of Qg=1.8nC (@ ID=4A) significantly reduces the AC dissipation at 3MHz enabling usage in DC converter applications. Independent MOSFET configuration and high ESD protection levels of â‰¥2kV also enables usage in battery protection circuits.
The SSM6N58NU is supplied in a UDFN6 surface mount that requires just 2mm by 2mm of board space with a body height of just 0.75mm. Due to the flat body of the structure, this package offers a power dissipation of 2W and can withstand channel temperatures up to 150 degrees C.