Toshiba Electronics Europe (TEE) has announced additions to its UMOS VIII-H ultra-efficient MOSFET family. The 32 new devices will help designers to save space and reduce losses in synchronous rectification and primary and secondary side switching applications and other high-speed designs requiring device ratings from 60V to 250V.
The latest MOSFETs offer voltage rating options of 60V, 80V, 100V, 150V, 200V and 250V, with each device available in a choice of TSON Advance or SOP Advance flat SMD packages. Respective board mounting areas are only 3 x 3mm and 5 x 6mm, while on resistance (RDS(ON)) values of many members of the family are best in class. For example the 100V TPH4R50ANH (maximum RDS(ON) of 4.5mÎ© @ VGS = 10V) and the 200V TPH2900ENH (maximum RDS(ON) of 29mÎ© @ VGS = 10V) combine the lowest RDS(ON) ratings with very low gate charge (Qg) and input capacitance (Ciss).
Toshiba's new UMOS VIII-H MOSFETs are based on the company's eighth generation UMOS trench semiconductor process. This process delivers significant improvements in RDS(ON) and Ciss characteristics to optimize efficiency and switching speeds while minimizing radiated noise.
Target applications for the 60V 250V SMD MOSFETs will include ac-dc and dc-dc conversion in industrial systems, digital home appliances, computing equipment and gaming products. The 80V to 150V devices will be particularly well-suited to power supplies in various elements of telecommunications application.