Conferences and Forums
Recapping Developments in the Field of Power MOSFETs
In January of this year, Alpha and Omega Semiconductor Limited (AOS) and SemiSouth Laboratories jointly demonstrated UniSiC™, a 1200V, 90mΩ MOSFET in a TO262 package, to meet the growing need for energy efficient switching devices for high performance power conversion applications in the alternative energy, industrial and consumer segments. The dramatic reduction in form factor and figures-of-merit put this 1200V MOSFET device in a class by itself.
AOS continues to execute its strategy to be a full service power solution provider by extending its portfolio of AlphaMOS™ MOSFETs and AlphaIGBT, devices with the revolutionary 1200V MOSFET solution described in this brief. The UniSiC MOSFET provides unprecedented low Rdson and gate charge Qg, an excellent body diode with virtually no stored charge and a low diode forward voltage drop. The device may be used similar to a conventional MOSFET or IGBT, with standard gate drives and is engineered so it can be switched over a wide speed range – as fast as a Superjunction MOSFET, or as slow as an IGBT. The device has far superior characteristics compared to existing IGBTs, Silicon power MOSFETs or even the best competitive SiC 1200V MOSFET. Key data is summarized in Table 1 and Figure 1 shows the die sizes of a 1200V IGBT with co-packaged diode, the 1200V competitor SiC MOSFET and the AOS UniSiC stack-cascode device. The small die size shows the tremendous potential this device creates for future miniaturization of power circuits given how much it cuts conduction and switching losses.
The full story can be found here http://powerpulse.net/story.php?storyID=25161
In February, Toshiba America Electronic Components, Inc. (TAEC) announced a new family of ultra-high-efficiency, high-speed MOSFETs that deliver significant improvements in trade-off characteristics between low on resistance (RDS(ON)) and low input capacitance (C(iss)). The new trench MOSFET series will have voltage ratings from 60V to 120V and will allow designers to reduce the size and improve the efficiency and performance of secondary synchronous rectification in switch mode power supplies.
Use of Toshiba’s eighth generation N-channel U-MOSVIII-H process has allowed the company to reduce the R(DS(ON)) C(iss) ’figure of merit’ compared to previous generations by up to 42 percent. This improves overall efficiency by driving down both conduction and drive losses at the same time as significantly improving switching speeds. The new process technology also helps to minimize radiated noise.
The full story can be found here http://powerpulse.net/story.php?storyID=25287
Also in February, Vishay Siliconix announced two p-channel 30V members of its MICRO FOOT® TrenchFET® Gen III power MOSFET family. The new devices are claimed to set new benchmarks for size and on-resistance, with the Si8497DB announced as the industry’s first 30V chipscale MOSFET in the compact 1mm by 5mm size, and the Si8487DB providing the lowest on-resistance for a 30V chipscale device in the 1.6mm by 1.6mm form factor.
According to Vishay Siliconix, the new devices are intended for load, battery, and charger switching in handheld devices, including smart phones, tablets, point-of-sale devices, and mobile computing. In laptop battery management circuits, the MOSFETs’ low on-resistance is claimed to result in lower voltage drops across the load switch, reducing the occurrence of problem undervoltage lockouts. In tablet PC charger applications, smart phones, and POS devices, the low on-resistance is intended to allow the use of higher charge currents, enabling faster battery charging.
The 1.5mm by 1mm Si8497DB combines a 0.59mm maximum height with low on-resistance of 53mΩ at 4.5V, 71mΩ at 2.5V, and 120mΩ at 2.0V. The Si8487DB offer on-resistance of 31mΩ at 10V, 35mΩ at 4.5V, and 45mΩ at 2.5V, and a 0.6mm maximum height.
The full story can be found here http://powerpulse.net/story.php?storyID=25303
February also witnessed Fairchild Semiconductor providing designers of cellular handsets and other ultra-portable applications P-Channel PowerTrench® MOSFETs to meet their needs for a small sized battery or load switching solution with excellent thermal characteristics.
The FDMA905P and FDME905PT feature a MOSFET with low on-state resistance. These devices offer exceptional thermal performance for their physical size, and are also well suited to linear mode applications.
The full story can be found here http://powerpulse.net/story.php?storyID=25355