New Industry Products

Smallest Enhancement-Mode 600V GaN Power Transistors

May 17, 2015 by Power Pulse1595211359

Panasonic Corporation today announced that it will launch the industry's smallest enhancement-mode gallium nitride (GaN) power transistors in the X-GaN™ package. The GaN is encapsulated into 8x8 dual-flat no-lead (DFN) surface-mount package. It is possible to mount the package on small area where it is difficult to mount conventionally and it is contribute to the reduction of the power consumption of industrial and consumer electronics equipment. The breakdown voltage of the transistors is 600V and the products have achieved a high-speed switching of 200V/ns and a low on-resistance of 54 to 154 mΩ.

The company will ship product samples, 10A type (PGA26E19BV) and 15A type(PGA26E08BV), in July 2015. The products will be exhibited at Power Conversion Intelligent Motion 2015 (PCIM 2015) in Nurnberg, Germany from May 19 to 21, 2015. Panasonic’s previously-introduced GaN power transistor is encapsulated into high heat diffusion surface-mount package TO220 (size:15 x 9.9 x 4.6mm), however the package is not enough to be small and it is limited the mounting area on the printed circuit board in the electronics equipment.

The parasitic inductance reduce using surface mounting package and as a result the intrinsic GaN power transistor character, high switching performance, is brought out in smaller size 8 x 8 x 1.25mm under 600V high voltage. The power transistor is accelerated to introduce into electronics equipment and it contributes the reduction of the power consumption. This work is partially supported by the New Energy and Industrial Technology Development Organization (NEDO), Japan, under the Strategic Development of Energy Conservation Technology Project.