SiC Module jointly-developed by Panasonic and Sansha

Panasonic Corporation and Sansha Electric Manufacturing Co., Ltd., which offers the SanRex brand, today announced that they have developed a very compact SiC power module together with highly efficient operation of power switching systems. The SiC power module has sufficiently good reliability and greatly helps to reduce the size of power switching systems such as industrial inverters and power supplies.

The fabricated SiC power module integrates two SiC transistors into one package and achieves 6mΩ of on-state resistance with a rating current/voltage of 150A/1200V. The total volume of the module is reduced by one third compared to a conventional SiC power module. These features together with good reliability enable very compact and highly efficient power switching systems.

According to the announcement, SiC is very promising due to its superior material properties and is expected to reduce the power consumption of various switching systems. These high power switching devices need to be packaged into a so-called power module in which multi transistors are integrated. The developed SiC power module is based on the following proprietary technologies:

Panasonic’s SiC DioMOS (Diode-integrated MOSFET) has the features of a reverse conducting diode without any external diode. The total chip area of SiC is reduced by half from a conventional SiC, which helps to reduce the total footprint of the module. The improved design of the DioMOS structure reduces on-state resistance to 6mΩ at 150A.

Sansha Electric’s Techno Block module technologies utilize solder bonding for the SiC chips without any wire bonding. This configuration reduces the height of the module by half from conventional ones as well as they can serve three times better endurance of power cycling tests.