1200V SiC FETs target Expanded Applications Areas
The new SCT20N120 silicon-carbide (SiC) power MOSFET from STMicroelectronics, Inc. brings advanced efficiency and reliability to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. ST is among the vendors leading the development of the robust and efficient silicon-carbide power semiconductors.
The 1200V SCT20N120 extends the family, with on-resistance (RDS(on)) better than 290mΩ all the way to the 200 degrees C maximum operating junction temperature. Switching performance is also consistent over temperature due to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximize reliability.
In addition to their lower energy losses, ST’s silicon-carbide MOSFETs permit switching frequencies up to three times higher than similar-rated silicon IGBTs allow. This enables designers to specify smaller external components and save size, weight, and bill-of-materials costs. The SCT20N120’s high-temperature capability helps to simplify cooling-system design in applications such as power modules for electric vehicles.
The SCT20N120 comes with the added advantage of ST’s proprietary HiP247™ package with enhanced thermal efficiency, which allows reliable operation up to 200 degrees C while maintaining compatibility with the industry-standard TO-247 power-package outline. The SCT20N120 is in full production, priced from $8.50 for orders of 1000 pieces.
