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New Products
December 7, 2011
Infineon Introduces Automotive Qualified 100 Percent Lead-free Power MOSFETs in Standard TO Package Types
Infineon Technologies AG introduced automotive qualified 100 percent lead-free power MOSFETs for TO package types. Based on the combination of innovative packaging technology and Infineon’s thin wafer process technology, the new 40V OptiMOS™ T2 power MOSFETs offer best-in-class specifications. Infineon uses a diffusion soldering die attach approach to produce the lead-free packages that include TO-220, TO-262 and TO-263. Because of specific requirements in terms of package geometry, die pad thickness and chip size the diffusion soldering die attach approach is today only suitable for these three package types, and Infineon is able to supply them: OptiMOS T2 products in these packages are ready for production.
With the new MOSFET series, Infineon exceeds current RoHS (Restriction on Hazardous Substances) directives related to lead-based solder used to attach silicon chips to packages. Stricter ELV RoHS directives pending implementation after 2014 may require 100 percent lead-free packaging. According to Infineon, as the first MOSFETs in the industry to eliminate lead, the new Infineon devices allow customers to meet these stricter requirements.
"Infineon is a technology leader both in power semiconductors and related package technologies," said Frank Schwertlein, Vice President and General Manager Standard Power at the Automotive Division of Infineon Technologies AG. "With introduction of lead-free packages we are the world’s first chip supplier to present our automotive customers future-proof, RoHS compliant and environmentally friendly MOSFETs to develop energy-efficient ’green’ products."
The Infineon-patented lead-free die attach (the interconnection between chip and leadframe of the package) uses a diffusion soldering approach, which allows improved electrical and thermal performance, manufacturability and quality. Matching this die attach technology with Infineon’s thin wafer processes (60µm compared to standard 175µm) enables several improvements for power semiconductors:
– The technology is environmentally friendly as no use of lead or other toxic material is involved.
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– Through the combination of diffusion soldering die attach process and thin wafer technology the RDS(on) of the devices is significantly reduced.
– Thermal resistance (RthJC) is improved by up to 40 to 50 percent, as the conventional lead-based soft solder material has poorer thermal conductivity and acts as a thermal barrier for the heat generated on the junction of the MOSFET.
– Further benefits are a better manufacturability because there is no solder bleed-out and no chip tiltness as well as tighter RDS(on) and RthJC distribution, and finally an improved reliability and quality due to reduced electro-mechanical stress within the product.
The specifications of the new OptiMOS T2 40V, e.g. the IPB160N04S4-02D which provides 160A, offers a RDS(on) of only 2.0mΩ and a RthJC of 0.9K/W. The on-resistance is about 20 percent less compared to related devices using standard lead-based die attach soldering. In addition, the patented diffusion soldering technique results in a reduced "chip-to-leadframe" thermal resistance and positions the new OptiMOS T2 products with best-in-class performance.
With the first OptiMOS T2 derivatives, the industry first 100 percent lead-free power MOSFETs in TO packages for automotive are available now: the IPB160N04S4-02D (with 160A in a TO-263 package), the IPB100N04S4-02D (100A, TO-263), the IPP100N04S4-03D (100A, TO-220) and the IPI100N04S4-03D (100A, TO-262).
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