Siliconix Debuts Si1012X and Si1024X Series of TrenchFETs
Siliconix Inc. (Santa Clara, CA), a subsidiary of Vishay Intertechnology (Malvern, PA), announced the debut of a series of new TrenchFETs, claimed to be the smallest MOSFETs on the market. The new devices will serve as a replacement for the digital bipolar transistors used for simple or light-load switching in portable communications systems, computer motherboards, power supply converter circuits, and battery-operated equipment. Devices in the new three-pin LittleFoot SC-89 have a footprint area measuring 1.6mm by 1.6mm, and a height profile of 0.6mm.
The new series includes the Si1012X, a single n-channel 20V TrenchFET with on-resistance of 1.25 ohms at a 1.8V gate drive. Fully on at a gate-source voltage of 1.8 V, the Si1012X requires significantly less power to operate than the digital bipolar transistors it will replace. The new device has a 500mA steady-state continuous drain current. The Si1012X has a turn-on time of 5ns.
Siliconix has also released a dual-channel version of the Si1012X. The new
Si1024X combines two MOSFETs in a 6-pin LittleFoot SC-89 package with the
same specifications per channel as the Si1012X. The dual-channel version has the same footprint and height profile as the 3-pin SC-89.
Along with the Si1012X and Si1024X, the company is planning to release more than a
dozen additional 20V MOSFETs in the SC-89 and SC-75 packages, including n- and p-channel devices. Maximum on-resistance ratings for these devices will range from 0.7 ohms to 9 ohms at a gate-source voltage of ±4.5V. All devices in both package types will feature ESD protection.
Samples and production quantities of the Si1012X and Si1024X are available now, with lead times of four weeks for larger orders. Pricing for US delivery in 100,000-piece quantities is less than $0.10.
