New Industry Products

Silicon Carbide Bare Die up to 8000V from GeneSiC

November 06, 2013 by Jeff Shepard

GeneSiC Semiconductor, Inc. announced the immediate availability of 8000V SiC PiN rectifiers; 8000V SiC Schottky rectifiers, 3300V SiC Schottky rectifiers and 6500V SiC Thyristors in bare die format. These unique products represent the highest-voltage SiC devices on the market, and are specifically targeted towards oil and gas instrumentation, voltage multiplier circuits and high-voltage assemblies. GeneSiC's 8000 V and 3300 V Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher ac input voltages. The near-ideal switching characteristics can enable the elimination/dramatic reduction of voltage balancing networks and snubber circuits. 8000 V PiN Rectifiers offer higher current levels and higher operating temperatures. 6500 V SiC Thyristor chips are also available to accelerate R&D of new systems.

8000V, 2A SiC bare die PiN rectifier highlights include: Tjmax = 250oC, Reverse Leakage Currents < 50 uA at 175 degrees C, and Reverse Recovery Charge 558 nC (typical). 8000V, 50mA SiC bare die Schottky rectifier highlights include: Total Capacitance 25 pF (typical, at -1 V, 25oC), Positive temperature coefficient on VF, Tjmax = 175 degrees C. 6500V SiC Thyristor bare die highlights include: Three offerings including 80A (GA080TH65-CAU), 60A (GA060TH65-CAU) and 40A (GA040TH65-CAU); all with Tjmax = 200 degrees C. 3300V, 0.3A SiC bare die rectifier highlights include: On-state Drop of 1.7 V at 0.3 A; Positive temperature coefficient on VF; Tjmax = 175 degrees C; and capacitive charge 52 nC (typical).

“These products showcase GeneSiC’s strong lead in the development of SiC chips in the multi-kV ratings. We believe the 8000 V rating goes beyond what Silicon devices can offer at rated temperatures, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Rectifiers and Thyristors will enable system level benefits not possible before" said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

Contemporary ultra-high voltage circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers discharge the parallel connected capacitors. At higher rectifier junction temperatures, this situation worsens further since the reverse recovery current in Silicon rectifiers increases with temperature. With thermally constraints high voltage assemblies, junction temperatures rise quite easily even when modest currents are passed. High-voltage SiC rectifiers offer unique characteristics that promise to revolutionize the high voltage assemblies.