GaN Systems unveiled the industry’s highest current and power efficient 100V GaN power transistor, the 100V, 120A, 5mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of GaN Systems’ own 90A part and 2.4X-to-4.6X the current rating of other high current GaN in the industry.
The GS-010-120-1-T is an enhancement mode GaN-on-silicon power transistor that leverages all of the die design and packaging advantages delivered from GaN Systems. This new GaN transistor was on display at APEC in San Antonio, Texas on March 4-8.
This revolutionary transistor is targeted for the growing 48V applications in the automotive, industrial, and renewable energy industries which require power systems with high power levels in smaller size form factors. Bringing products like the GS-010-120-1-T into market results in realizations such as longer range electrical vehicles, lower operating cost renewable energy equipment, and smaller, highly integrated industrial power equipment.
In addition, the transistor enables greater design flexibility and affords options for immediate specification changes. The transistor is footprint-compatible with GaN Systems’ 100 V, 90 A GaN E-HEMT (GS61008T), thereby enabling customers to add further power by substituting the GS-010-120-1-T without changing their board. Increasing the current capability in the same size package allows customers to effectively increase the power by 33 percent for the same system volume.
“Our technology roadmap is positioned to deliver to the growing need of best-in-class GaN technology solutions in 100V as well as 650V applications,” stated Larry Spaziani, Vice-President, Sales & Marketing for GaN Systems. “The new 100V, 120A GaN E-HEMT – along with our recently announced 650V, 120A GaN E-HEMT – are among a significant number of recent high-performance GaN transistors and solutions we have introduced.
“Our intention, as the world’s leader in GaN power semiconductors, is to continuously provide products designed to exceed power system efficiency and reliability requirements in today’s most demanding applications,” Spaziani concluded.