Components

Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

Texas Instruments (TI) today announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in ac-dc power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications.

TI’s family of GaN FET devices provides a smart alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies.

With integrated <100-ns current limiting and overtemperature detection, the devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.

Key features and benefits of the LMG3410R050, LMG3410R070 and LMG3411R070:

  • Smaller, more efficient solutions: TI’s integrated GaN power stage doubles power density and reduces losses by 80 percent compared to silicon metal-oxide semiconductor field-effect transistors (MOSFETs). Each device is capable of fast, 1-MHz switching frequencies and slew rates of up to 100 V/ns.
  • System reliability: The portfolio is backed by 20 million hours of device reliability testing, including accelerated and in-application hard switch testing. Additionally, each device provides integrated thermal and high-speed, 100-ns overcurrent protection against shoot-through and short-circuit conditions.
  • Devices for every power level: Each device in the portfolio offers a GaN FET, driver and protection features at 50mΩ or 70mΩ to provide a single-chip solution for applications ranging from sub-100W to 10kW.

Functional block diagram

Visit TI at electronica

Texas Instruments is showcasing a 10-kW cloud-enabled grid link demonstration in Hall C4 – Booth 131 at electronica at Messe München in Germany, Nov. 13-16, 2018. Developed jointly by TI and Siemens, the active demonstration uses TI’s LMG3410R050 600-V GaN FET with integrated driver and protection, enabling engineers to achieve 99 percent efficiency and up to 30 percent reduction in power component size compared to a traditional silicon design.

Package, availability and pricing

These devices are available now in the TI store in 8-mm-by-8-mm split-pad, quad flat no-lead (QFN) packaging. The LMG3410R050, LMG3410R070 and LMG3411R070 are priced at US$14.95, $16.45 and $16.45, respectively, in 1,000-unit quantities.

Texas Instruments Incorporated
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