New Industry Products

Philips Achieves Schottky Diode Breakthrough

June 25, 2003 by Jeff Shepard

Royal Philips Electronics (Eindhoven, the Netherlands) announced a breakthrough in Schottky diode semiconductor technology that reduces power dissipation to such low levels that these diodes can now be housed in surface-mount packages less than half the size of existing devices. The new PMEG Series Schottky diodes are designed to enable miniaturization of equipment such as mobile phones and digital cameras. The inherent low-forward-voltage drop and high-speed switching capabilities make the diodes suitable for dc/dc converter applications.

The new PMEG Series provides designers with packages that reduce the printed circuit board area required for Schottky rectifier diodes to as little as one-quarter of that previously occupied by devices in SMA packages. It also extends the current (IF) handling capacity of SMD Schottky diodes to unprecedented levels.

Philips' new ultra-low VF Schottky technology will also be combined with its ultra-low VCEsat BISS-transistor technology to provide cost-efficiency transistor-diode combinations in small packages for low- and medium-power dc/dc converter, MOSFET driver, battery charger, relay and motor driver (PMEM Series applications.

Currently available, the PMEG Series Schottky rectifier diodes in SOD323, SOD523 and SOT666 packages sell for between $0.05 and $0.08 in high volume. Schottky diode/BISS-transistor modules in SOT457 and SOT96-1 packages sell for around $0.12 in high volume.