ON Semiconductor Launches Next-Generation, High-Voltage MOSFETs
ON Semiconductor LLC (Phoenix, AZ) launched its next-generation, high-voltage MOSFETs, offering a 30-percent reduction in RDS(on) and a lower gate charge over its existing MOSFETs. The TMOS 7 E-FET Series are N-channel, enhancement-mode silicon gate that can be used in a range of power-management applications, including telecommunication products and switch-mode power-supply systems. Specification points previously available only in TO-220 and D2Pak packages are now available in the surface-mount Dpak package, allowing for the replacement of parts existing in TO-218, TO-247 and TO-263, with parts contained in TO-220 and D2Pak packages.
Designed for high-voltage, high-speed applications, the TMOS 7 E-FET MOSFET Series, with part numbers NTP/D/BXNXX, are best for supplies, converters and PWM motor controls. Their energy-efficient design makes these MOSFETs ideal for bridge circuits where the diode speed is critical. They also offer an additional safety margin against unexpected voltage transients. The product family features 400V, 500V and 600V N-channel MOSFETs designed to withstand high energy in avalanche and commutation modes. The new design also offers a drain-to-source diode with a fast recovery time. Samples and production quantities are now available.
In 1K tape and reel quantities, the MOSFETs range from $0.94 to $1.96 depending on the part number.
