Navitas Semiconductor today announced the opening of a new GaNFast Design Center, in Hangzhou, China, to enable pioneering partner customers to deliver leading edge converter designs that are 50% smaller, 50% lighter and can charge mobile applications up to 3x faster than old, slow silicon-based designs.
"The GaNFast Design Center is staffed with experienced, proven, high-level application engineers, chartered to develop new high-frequency, high-efficiency and high density power systems, and to assist customers to exploit fully the key performance and benefits of GaNFast power ICs." said Michael Xu, Sr. Director of Applications and head of the new facility.
"We have the tools, skills and resources to develop new, advanced power architectures, and simultaneously ensure customers meet all critical specifications, from efficiency and thermal optimization to EMI compliance for mass production," continued Xu.
The world's first GaNFast power ICs enable simultaneous MHz-frequency and highest-efficiency operation. These advances translate to smaller, lighter, lower system cost power conversion in mobile fast chargers and adapters, LED TVs, EV/Hybrid, LED lighting and new energy solutions.
"The Hangzhou location is central to China's academic & innovation hub, with very close links to Zhejiang University and customers' advanced research locations in Shanghai and Suzhou," said Dan Kinzer, Navitas CTO, adding "Navitas' vision is to exploit GaN power IC performance to create a new class of high-frequency, high-efficiency, high-density power systems".
The opening ceremony features a welcome presentation by Navitas CEO, Gene Sheridan, who added, "Following the recent Navitas Shenzhen opening, the new Hangzhou GaNFast Design Center shows significant investment in technical advances and strong customer support in China. Through semiconductor, and system-level innovations, combined with industry partnerships, we can transform this RMB 200B/year industry."