Batteries and Portable Power

N-channel MOSFETs Claim Lowest On-resistance

Texas Instruments, Inc. (TI) today introduced 11 new N-channel power MOSFETs to its NexFET™ product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot-swap and ORing applications claiming the industry’s lowest on-resistance (Rdson) in a QFN package. In addition, TI’s new 12-V FemtoFET™ CSD13383F4 for low-voltage battery-powered applications achieves the lowest resistance at 84-percent below previous devices in a tiny 0.6 mm by 1 mm package.

The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs deliver higher power conversion efficiencies at higher currents, while ensuring safe operation in computer server and telecom applications. For instance, the 25-V CSD16570Q5B supports a maximum of 0.59 milliohms of Rdson, while the 30-V CSD17570Q5B achieves a maximum of 0.69 milliohms of Rdson.

TI’s new CSD17573Q5B and CSD17577Q5A can be paired with the LM27403 for dc-dc controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be paired with a TI hot-swap controller such as the TPS24720.

Available in volume now. The products range in price from US$0.10 for the FemtoFET CSD13383F4 to US$1.08 for the CSD17670Q5B and CSD17570Q5B, all in 1,000-unit quantities.

Texas Instruments Incorporated
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