Mitsubishi Electric Corporation has started shipping samples of new hybrid silicon carbide (SiC) power semiconductor modules for high-frequency switching applications. Featuring SiC diodes, the modules achieve high efficiency, downsizing and weight reduction in inverters for power conditioners and other power equipment, uninterrupted power supplies (UPS) and medical device power supplies. The new models will be exhibited at Power Conversion Intelligent Motion Europe 2014, which will be held in Nuremberg, Germany from May 20 to 22.
These modules are the latest addition to Mitsubishi Electric’s NFH Series of next-generation hybrid SiC power semiconductor modules, which are noted for significantly reducing electric power loss in high-frequency switching applications thanks to their SiC diodes. The package is compatible with conventional power modules for easy replacement. Features of these new power modules include:
40%reduction in power loss contributes to efficiency, downsizing and weight reduction of total system: Incorporates SiC Schottky Barrier Diode (SBD) and Si-IGBT for transistors in high-frequency switching applications. Contributes to system efficiency because SiC-SBD does not have recovery current, so power loss is reduced about 40% through significantly lower switching loss. Contributes to downsizing and weight reduction of system components, such as reactors and heat sinks, due to high-frequency switching and significant reduction of power loss.
Suppresses surge voltage through internal inductance reduction: Low-inductance package adopted for high-frequency switching applications. 100A and 150A modules reduce internal inductance by about 30%compared to conventional IGBT module using silicon.