Low-Leakage Schottky Barrier Rectifiers in SOD123W
NXP Semiconductors N.V. has introduced the first two 60-V low-leakage Schottky barrier rectifiers in the FlatPower SOD123W package. PMEG6010ELR and PMEG6020ELR offer a reverse voltage of 60V and average forward currents of 1A and 2A, respectively. They also offer a low reverse current of 1µA at 60V and forward voltage drops of 660mV and 760mV, respectively. Capable of temperatures up to 175 degrees C and AEC-Q101 qualified, these Schottky barrier rectifiers offer a reduced leakage current, even at high temperatures. This makes them well-suited for automotive applications such as airbags, ABS and engine control systems.
Due to the use of clip bond technology the FlatPower SOD123W package offers higher power capabilities on a small footprint of only 2.6 x 1.7 mm. Together with a height of only 1 mm, the small package size makes these devices especially suitable for designs where high performance in limited space is needed. These diodes are the first in a series of Schottky rectifiers in FlatPower packages SOD123W and SOD128.
Key features and benefits of the new devices include: Reverse voltage VR ≤ 60 V; Average forward current IF(AV) ≤ 1 and 2 A; Low reverse current IR ≤ 1 µA at 60 V; Low forward voltage VF ≤ 660 mV at 1 A and 750 mV at 2 A; AEC-Q101 qualified; High temperature applications up to 175°C. Applications are expected to include: Polarity protection, automotive applications, ac-dc power supplies and dc-dc converters, and a variety of industrial and other high-temperature uses.
