IXYS Intros Four 1,200V High-Voltage MOSFETs

IXYS Corp. (Santa Clara, CA) announced the availability of four new high-voltage MOSFET products, assembled in either the TO-220 through-hole package or the TO-263 surface-mount package.

The IXTP3N120 (TO-220 housing) and the IXTA3N120 (TO-263 housing) are rated at 1,200V, 3A, and have an RDS(on) of 4.5 Ohms. The IXTP3N110 and IXTA3N110, also rated at 3A, have a blocking voltage of 1,100V and an RDS(on) of 4 Ohms. The 1,100V devices are suitable for applications that require more than a 1,000V rating without the penalty of the higher on-resistance of the 1,200V rated devices.

The maximum power rating for all four parts is 150W, and all feature low rise and fall times of 15ns and 18ns, and a very low gate charge for turn on of 39nC. Applications for the new MOSFETs include high-voltage switching power supplies, compact high-voltage dc/dc converters, dc/ac inverters, pulse generators, and high-voltage discharge circuits used in laser pulsers, spark igniters, and RF generators.

Deliveries of sample quantities are from stock. Production quantities are available in 12 to 16 weeks.