IXYS Corp. has expanded its GenX3™ insulated gate bipolar transistor (IGBT) portfolio to 1200V. These new IGBTs are manufactured using IXYS’ GenX3 IGBT process and utilize IXYS’ advanced technology to provide lower saturation voltages, lower switching losses and higher surge current capabilities. This new extension of GenX3 IGBTs is aimed at the high voltage power conversion market.
To accommodate optimum part selection, designers have a choice in selecting among three sub-classes denoted A3, B3 and C3. These classifications are said to offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency and cost. Co-packed variants of these new devices are available with IXYS’ HiPerFRED™ and SONIC-FRD™, ultra-fast recovery diodes providing exceptional fast recovery and soft switching characteristics. Additional product attributes include avalanche capabilities and a square reverse bias safe operating area, allowing the device to safely switch in a snubberless hard switching application.
A variety of high voltage applications stand to benefit from the unique power handling and efficiency advantages of this family of IGBTs. Possible applications include solar inverters, automatic voltage regulators, industrial battery chargers, wind turbine inverters, capacitor discharge circuits, electronic circuit breakers, resonant power conversion circuits, induction heating for industrial processing, uninterruptible power supplies, motor drives, switch-mode power supplies, power factor correction circuits and welding machines.
IXYS’ 1200V GenX3 IGBTs are offered in various standard and ISOPLUS packages with collector current ratings Tc=°C from 20 to 120A. Standard packages include the TO-263, TO-247, PLUS247, TO-220, TO-264 and TO-268.
