IXYS Announces Availability of the IXF_80N085 Series MOSFETs

IXYS Corp. (Santa Clara, CA) announces the availability of a new 85V rated series of high-power MOSFETs made from a single die. At a case temperature of 25 degrees C, the IXF_80N085 is rated at 80A and 300W and has an Rds(on) of less than 9 milliohms. It is available in either the TO-247 through-hole package, or surface-mountable TO-268 package.

The IXF_180N085 is a higher-current MOSFET than the IXF_80N085 with a 560W power-dissipation rating and a maximum Rds(on) of 6 milliohms. The three available packaged parts are the IXFK180N085, which is in the JEDEC TO-264 package, the IXFX180N085 in the PLUS247 package, or the IXFR180N085 in the new, isolated, ISOPLUS247 package.

Both chips incorporate the company's HiPerFET process, which they claim provides high-avalanche-energy capability, high-current transconductance for high-peak current capability and reduced reverse-recovery switching time of the body diode.

This new family of devices is targeted toward low-voltage motor controls, such as electric vehicles, where they can replace multiple devices connected in parallel. Pricing for quantities of 1,000 varies from $8.85 to $11.88. Sample quantities are available from stock with production quantities available in 12 to 16 weeks.