International Rectifier Corp. (IR, El Segundo, CA) introduced the new IRF8010 Series of HEXFET power MOSFETs with as much as 10 percent lower on-resistance, or RDS(on) than previous devices. The new devices have high current density and low on-resistance (12 milliohms typical) for maximum system efficiency. The new IRF8010 MOSFETs are suitable as primary switches in isolated topology, high-efficiency uninterruptible power supplies and dc/dc converters.
The new MOSFETs are rated for repetitive and single-pulse avalanche energy, EAR and EAS, up to 175°C. In addition, the new MOSFETs feature minimized input capacitance and gate charge to simplify gate driver circuits and cost while improving switching performance at the same time. The new devices are industrial qualified and fully characterized in thermal resistance for end of life conditions in demanding power and thermal cycling, typically found in motor control applications, such as forklifts, dc choppers and battery-operated vehicles.
The new MOSFETs are available immediately. Pricing begins at $0.624 each for the IRF8010 in 5,000-unit quantities.
