New Industry Products

High-Isolation SiC Gate Drivers

September 28, 2016 by Jeff Shepard

The IG120-20 dc-dc converter recently-introduced by MicroPower Direct is designed to be used in the driver circuits for silicon carbide (SiC) MOSFETs. The asymmetrical outputs of the IG120-20 provide the +20V positive gate bias and -4V negative gate bias needed to efficiently switch the MOSFET. The IG120-20 is EN 60950 approved and features 3,500Vac (6,000Vdc) isolation.

The IG120-20 output current is +100 mA. Standard features include continuous short circuit protection, efficiency as high as 83%. The IG120-20 has an MTBF (per MIL HDBK 217F) of greater than 3.5 million hours.

The IG120-20 is packaged in a 19.5mm x 9.8mm x 12.5mm high, 7-pin SIP. The pin-out is industry standard and all case materials meet UL94-V0 requirements. It is specified for operation over an operating temperature range of -40 to +105 degrees C (full power to 85 degrees C, with linear derating to 80% at 105 degrees C) with no heat sinking required. Cooling is by free-air convection.