New Industry Products
General Semiconductor Reports New GENFET MOSFET Developments
July 15, 2001 by Jeff Shepard
General Semiconductor (Melville, NY) reports that it is developing a 200-million-cell-per-square-inch technology that promises to shrink power MOSFETs in half while simultaneously producing four times as many as before. The devices, called GENFETs, will be suitable for use in cellular phones, notebook computers, PDAs and other wireless devices.
The GENFETs are produced using the company's 0.35um trench process that results in an Rds(on) of 0.41 mohms/sqcm for a 30V p-channel device. Samples of the GENFET MOSFETs in six-leaded SOT-23 and SOT-363 packages will be available by the end of the second quarter, with full production beginning by summer.
