New Industry Products

Gate Drivers for IGBTs and SiC MOSFETs

July 28, 2016 by Jeff Shepard

Murata has announced the MGJ1 1-Watt dc-dc converter series manufactured by Murata Power Solutions. These compact devices are designed for driving high- and low-side gate circuits such as those using IGBTs and SiC MOSFETs for optimal efficiency. With high isolation characteristics, up to 5.2kVdc, the MGJ1 offers the popular nominal output voltage combinations of +15 / -5, +15 / -9, or +19 / -5 Vdc. The series also offers a choice of +5, +12, or +24 Vdc input.

The MGJ1 series is characterized for high dV/dt immunity, which aids reliable and continued operation in fast switching circuits, and partial discharge performance that contributes to a long service life. Also, the converter's low input-to-output coupling capacitance, typically 5pF, assists in reducing the effects of EMI.

The series suits a broad range of medical applications for which certification to ANSI/AAMI ES60601-1 to 2 MOOPs is pending. The converter also conforms to the UL 60950 (pending) for reinforced insulation and by incorporating a 9.3mm creepage and clearance space helps safety agency approvals for high working voltage applications.

Ann-Marie Bayliss, product manager, Murata Power Solutions comments, “The MGJ1 provides optimized voltages for powering gate drives for best system performance and efficiency. It also has high isolation and a characterized partial discharge performance and dV/dt immunity.”