Efficient Power Conversion Corporation (EPC) will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2014 (DES). The conference will be held in Richmond, Virginia, from September 23rd through the 25th. EPC’s CEO and applications experts will conduct a half-day seminar and several technical presentations, including an invited plenary session presentation, on a multitude of applications enabled by this game-changing technology
This summit combines efficient power conversion, green building design and smart grid electronics into a single conference. The presentations will focus on advanced power conversion technologies needed for the successful development of next-generation power systems. It is a solutions-oriented event, with a strong emphasis on practical advances in power electronics and energy efficiency.
DES will feature an Educational Seminar: "GaN Transistors for Efficient Power Conversion." Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN technology works. This session will discuss fundamental GaN technology and how to use these devices. To showcase their real-world value, several applications including efficient dc-dc conversion, high frequency envelope tracking, and wireless power transfer will be presented. The seminar will conclude with a look at future of gallium nitride an emerging displacement technology for MOSFETs.
Technical Presentations by EPC Experts Featuring GaN FETs: Plenary Session, "GaN Transistors Giving New Life to Moore's Law," Alex Lidow; Technical Sessions, "Pushing the State of the Art in High Frequency Hard-Switching Converters Using eGaN FETs," presented by Johan Strydom, "Performance Comparison Using eGaN FETs in 6.78 MHz Class-E and ZVS Class-D Wireless Power Transfer," presented by Michael de Rooij, and "Advances in DC-DC Converters With eGaN FETs," presented by David Reusch.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as dc-dc converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.