EPC Expands eGaN® Family Capable of Amplification into the Multiple GHz Range
Efficient Power Conversion Corporation extends its family of high-speed, high-performance enhancement-mode gallium nitride on silicon (eGaN®) power FETs with the EPC8010 power transistor. Sold in die form, the EPC8010 is 1.75 mm2 with 100 VDS. Optimized for high-speed switching, the EPC8010 has a maximum RDS(on) of 160 milliohms and input gate charge in the hundreds of pico-coulombs. Applications benefiting from the low power, compact, high-frequency EPC8010 include hard-switching power converters operating in the multi-megahertz range for envelope tracking, RF power amplifiers, and highly-resonant wireless power transfer systems for wireless charging of mobile devices.
This device has switching transition speeds in the sub nano-second range, making it uniquely capable of hard-switching applications above 10 MHz. Even beyond the 10MHz for which they were designed, this product exhibits very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.
“The EPC8010 is an excellent addition to our family of ultra high-speed eGaN FETs. It takes EPC and gallium nitride transistor technology to a level of performance that enables applications beyond the capability of the aging MOSFET. These eGaN FETs can be used in both power switching and RF applications,†noted Alex Lidow, co-founder and CEO.
Additionally, an EPC9030 development board featuring two EPC8010 devices in a half-bridge configuration with minimum switching frequency of 500 kHz is available now. The purpose of this development board is to simplify the evaluation process of the EPC8010, providing a single board that can be easily connected into any existing converter.
Evaluation units of the EPC8010 are immediately available in 2- and 10-piece packs starting at $40 through Digi-Key Corporation here . The EPC9030 development board is available now for $150 through Digi-Key Corporation here.
