Dynex Semiconductor Releases the New P IGBT Module Package

Dynex Semiconductor (UK) has released a compact IGBT module package designed for applications up to 3,300V, including traction auxiliaries and specialist motor drives. The new P package has a 6kV isolation rating and has baseplate dimensions of 140 x 73mm.

The first product available using the P outline is the DIM200PHM33 Powerline 200A, 3,300V IGBT module. This module is a half-bridge switch containing non-punch-through (NPT) DMOS IGBT die with full 10µs short-circuit withstand capability. The long-term reliability and enhanced thermal performance are achieved through the use of aluminum-nitride substrates mounted on a metal matrix compound baseplate. The same package with a 100A half-bridge is planned for release shortly.

Dynex reports that in time, their new P outline will be applied across the IGBT Powerline variants as well as the fast-recovery diode variants at 3,300V.