Toshiba America Electronic Components, Inc. (TAEC) has extended its range of high-efficiency U-MOS IX-H MOSFETs. The new 60V TPW1R306PL is an N-channel device in a DSOP Advance surface mount device (SMD) package that offers dual-sided cooling. The enhanced thermal dissipation provided by dual-sided cooling can help to reduce device count and save space in applications with high component density, including: dc-dc converters, secondary-side circuits of ac-dc power supplies and motor drives in cordless home appliances and power tools.
The TPW1R306PL has an ultra-low typical on-resistance (@VGS =10V) of just 0.95mÎ© and is offered in a very small form factor of 5x6mm. Maximum drain current and power dissipation are 100A and 170W, respectively. Additionally, the TPW1R306PL’s top-of-package thermal resistance rating (Rth (ch-c) of 0.88k/W) is very low.
Toshiba’s U-MOS IX-H process enables an exceptional performance trade-off between RDS(on) and output capacitance/output charge, making typical QOSS just 77.5nC (@VDS=30V, f=1MHz). This allows designers to further improve system performance and efficiency by raising switching speeds and reducing switching losses.