Driver ICs target GaN and SiC Power Transistors

X-REL Semiconductor SAS has introduced the XTR25010 a high-temperature, high reliability power transistor driver integrated circuit specifically designed to drive wide band-gap power transistors, such as Silicon Carbide (SiC) (including normally-On and normally-Off JFETs), Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT), and power MOSFETs and BJTs. The XTR25010 brings an increase in reliability and lifetime by an order of magnitude compared to traditional solutions. The new driver is targeted for use in reliability-critical automotive, aeronautics, aerospace and down-hole applications such as intelligent power modules, power inverters, dc-dc converters, ac-dc power supplies and motor drives.

For turning on the power transistors, the XTR25010 includes two independent pull-up gate-drive-channels capable of sourcing 2A peak current. For turning off the power transistors, the XTR25010 includes two pull-down gate-drive channels capable of sinking 3A peak current. For driving wide band-gap transistors, it is recommended to use XTR25010 as a power stage extension for the XTR26010, which generates the needed control signals and additional protection functions.

XTR25010 can also be used standalone as a half-bridge driver for dc-dc converters and motor drive. Features include: Operational beyond the -60 to +230 degrees C temperature range; Supply voltage up to 40V; Half-bridge driver; Integrated charge pump; Latch-up free. Ruggedized SMT packages; And it is available as bare die.