PowerPulse Weekly for July 10, 2017

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Power Spotlight (Updated June 20, 2017)
"High Power Wireless Power Transfer for the Industrial Environment"

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As the presence of wireless power transfer technology increases in consumer electronics, the industrial and medical industries are shifting focus towards this technology and its inherent advantages. As communication interfaces are becoming increasingly wireless with technologies like WLAN and Bluetooth, wireless power transfer has become a relevant option. Completely new approaches can be taken that not only offer obvious technical advantages, but also open up possibilities for new industrial design. This technology offers new concepts - especially in industrial sectors struggling with tough environmental conditions, aggressive cleaning agents, heavy soiling and high mechanical stresses (e.g. ATEX, medicine, construction machines). For instance, expensive and susceptible slip rings or contacts can be substituted. Another field of application is with transformers, which have to satisfy special requirements, such as reinforced or doubled insulation. The target of this Application Note is to demonstrate that easy-to-achieve solutions for wireless power transfer of one hundred Watts or more are reachable using circuit technology, without the need of software or controllers.

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  • Friday Feature (Updated July 7, 2017)

    113-picoWatt Temp Sensor for Wearables and IoT Nodes

    Electrical engineers at the University of California San Diego have developed a temperature sensor that runs on only 113 picowatts of power – 628 times lower power than the state of the art and about 10 billion times smaller than a Watt. This “near-zero-power” temperature sensor could extend the battery life of wearable or implantable devices that monitor body temperature, smart home monitoring systems, IoT devices and environmental monitoring systems.

  • Material Development (Updated July 7, 2017)

    Growing GaN with Nb2N for Better Cost and Performance

    One major roadblock is that the best substrates for ensuring high-quality growth of electronic materials tend to be incompatible with critical design goals, such as low thermal resistance and cost, according to an article titled, “GaN on Anything” in Compound Semiconductor Magazine’s January/February issue. To tackle this issue head on, the authors from the Naval Research Laboratory recently developed a versatile technique that releases III-N devices from their costly SiC substrates. This technology has the potential to form freestanding GaN and AlN.

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