IXYS Integrated Circuits Division, Inc. (ICD) announced the immediate availability of the IX21844 half-bridge gate driver IC. The IX21844 is a high-voltage IC that can drive discrete power MOSFETs and IGBTs that operate up to 600V. Both the high-side and low-side outputs feature integrated power DMOS transistors, each capable of sourcing 1.4A and sinking 1.8A of gate drive current. The IX21844’s 700V absolute maximum rating provides additional margin for high-voltage applications. The IX21844 is manufactured on IXYS ICD’s advanced HVIC Silicon on Insulator (SOI) process, making the IX21844 extremely robust and virtually immune to negative transients and high dV/dt noise.
The inputs are 3.3V and 5V logic compatible. Internal under voltage lockout circuitry for both the high-side and low-side outputs does not allow the IX21844 to turn-on the discrete power transistors until there is sufficient gate voltage. A programmable dead time can be set between 400ns and 5us to insure that both the high-side and low-side power MOSFET or IGBT are not enabled at the same time. The output propagation delays are matched for use in high-frequency applications.
The IX21844 can drive power discrete MOSFETs and IGBTs in half-bridge, full-bridge, and 3-phase configurations. Typical applications include motor drives, high voltage inverters, uninterrupted power supplies (UPS), and dc-dc converters. The IX21844 complements IXYS ICD’s extensive low side gate driver and optically isolated gate driver portfolios, and the full range of IXYS power semiconductors. This IX21844 is available in production quantities in 14-pin SOIC (IX21844N) and 14-lead DIP (IX21844G) packages.