Communications Power

650V IGBTs claim Near-Perfect Turn-off Efficiency for Extra Design Margin

The new HB series of Insulated-Gate Bipolar Transistors (IGBTs) from STMicroelectronics NV have up to 40% lower turn-off energy losses than competing high-frequency devices, while reducing conduction losses by up to 30%. Leveraging ST’s advanced Trench-Gate Field-Stop High-Speed technology, the HB series has a minimal collector-current turn-off tail as well as very low saturation voltage (Vce(sat)) down to 1.6V (typical), hence minimizing energy losses during switching and when turned on. In addition, the technology is well controlled, producing a tight distribution window of parameters, enhancing repeatability and simplifying system design.

ST's HB series IGBTs enhance the energy efficiency of solar inverters, induction heaters, welders, uninterruptible power supplies, power-factor correction, and other high-frequency power converters. The extended voltage rating of 650V ensures at least 600V breakdown voltage in ambient temperatures down to -40 degrees C, making the devices well-suited for solar inverters marketed in colder climates.

The maximum operating junction temperature of 175 degrees C and wide Safe Operating Area (SOA) increase reliability and allow smaller heatsinks. Options include maximum current ratings from 30A to 80A (at 100 degrees C), a selection of popular power packages, and co-packed diode optimized for resonant or hard-switching circuits. The HB series is in mass production now, priced from $2.14 for the STGW30H65FB in quantities of 1,000 units.

STMicroelectronics NV
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