GaN Systems Inc has announced five new normally-off 650V GaN transistors optimized for high speed system design. The GS66502P, GS66504P, GS66506P and GS66508P are respectively 8.5A/165mΩ, 17A/82mΩ, 25A/55mΩ and 34A/41mΩ parts, while the GS43106L is a 30A/60mΩ cascode. The company also announced a family of normally-off 100V GaN transistors that spans 20-80A with very low on resistance. GS61002P, GS61004P, GS61006P and GS61008P are respectively 20A/21mΩ, 40A/11mΩ, 60A/8mΩ and 80A/5mΩ parts while GS71008P is an 80A/5mΩ half bridge device.
The new enhancement mode parts feature a reverse current capability, source-sense for optimal high speed design and exceptionally low Total Gate Charge (QG) and Reverse Recovery Charge (QRR). RoHS compliant, the devices are delivered in GaN Systems' near chipscale, embedded GaNPX package which minimizes inductance and optimises thermal performance.
The new 650V enhancement mode parts feature a reverse current capability, zero reverse recovery charge and source-sense for optimal high speed design. RoHS compliant, these devices are also delivered in GaN Systems' near chipscale, embedded GaNPX package which eliminates wire bonds thereby minimizing inductance. This package also optimizes thermal performance and is extremely compact.
Girvan Patterson, President of GaN Systems comments: “With these new 650V parts as well as our recently-announced 100V family, GaN Systems offers a very wide range of parts which are available for are sampling now. Applications include high speed dc-dc converters, resonant converters, ac motor drives, inverters, battery chargers and switched mode power supplies."