600V MOSFET Pushes Performance to the Next Level

Infineon Technologies AG has released its latest high-voltage Superjunction MOSFET technology, the 600V CoolMOS™ CFD7 completing the CoolMOS 7 series. This new MOSFET addresses the high power SMPS market for resonant topologies.

It offers industry-leading efficiency and reliability in soft switching topologies like LLC and ZVS PSFB. This makes it especially well-suited for high power SMPS applications such as servers, telecom equipment power, and EV charging stations.

The 600V CoolMOS CFD7 succeeds the CoolMOS CFD2. The new MOSFET is up to 1.45 percent more efficient than its predecessor or competitor offerings. It combines all of the advantages of a fast switching technology with high commutation ruggedness, without impacting the easy implementation in the design-in process.

The 600V CoolMOS CFD7 is available in both TO220 package for through hold designs and surface-mount packaging (pictured above)

The 600V CoolMOS CFD7 features reduced gate charge (Q g) and improved turn-off behavior. Additionally, it has a reverse recovery charge (Q rr), which is up to 69 percent lower than competing products in the marketplace.

The 600V CoolMOS CFD7 provides solutions for THD and SMD devices, which supports high power density solutions. The 600V CoolMOS CFD7 is available now in mass production and samples can be ordered.

Infineon Technologies AG
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