Components

600-V GaN-on-Silicon Device offering Expanded

Transphorm Inc. today announced the industry’s first 600-V GaN (Gallium Nitride)-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. The new PQFN products, TPH3002LD and TPH3002LS, are offered in widely-used, low-profile PQFN88 packages and feature 290 mΩ RDS(on), 29 nC Qrr and low inductance for superior high-frequency switching capability. The PQFN88-packaged “LD” devices also feature a kelvin connection to better isolate the gate circuit from the high-current output circuit to further reduce EMI. In addition, the TPH3002PD and TPH3002PS TO220-packaged 600-V GaN HEMTs have been released for use in smaller, lower power applications such as adapters and all-in-one computer power supplies. These devices also feature 290 mΩ RDS(on), 29 nC Qrr and high- frequency switching capability.

"Every year since 2011 we have announced new advancements of our GaN technology and this year is no exception," said Primit Parikh, President of Transphorm. "Now by introducing the industry's first qualified 600V GaN PQFN-packaged products, we have increased the types of applications where GaN can enable dramatically more efficient, compact and low-cost solutions. This dispels the widespread misconception that GaN isn't ready for prime-time. Once again we've shown GaN products are available today and are actually being used in a multitude of real-world applications."

The TO220-packaged TPH3002PD and TPH3002PS and the PQFN-packaged TPH3002LD and TPH3002LS are available for sale to qualified customers worldwide, directly or through Transphorm's distribution channels. Additionally, evaluation boards are available with the 600V TO220 GaN HEMT devices in configurations for LLC dc-dc converter, totem-pole PFC and all-in-one power supply.

Transphorm's 600V GaN HEMTs (high electron mobility transistors) utilize the company's patented, high-performance EZ-GaN technology that combines low switching and conduction losses, reducing the overall system energy dissipation up to 50% compared with using conventional silicon-based power conversion designs.

Transphorm Inc.
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