Mitsubishi Electric Corporation announced today that it has developed a 6.5kV full silicon carbide (SiC) power semiconductor module that is believed to offer the world’s highest power density (calculated from rated voltage and current) among power semiconductor modules rated from 1.7kV to 6.5kV.
The unprecedented power density is made possible by the model’s original structure with integrated metal-oxide-semiconductor field-effect transistor (MOSFET) and diode on single chip and its newly developed package.
Mitsubishi Electric expects the module to lead to smaller and more energy-efficient power equipment for high-voltage railcars and electric power systems. Going forward, the company will continue to further develop the technology and conduct further reliability tests.
Features of the new 6.5kV full-SiC power module include:
- Highest rated voltage in full-SiC modules should lead to smaller and more efficient power electronics equipment
- 5kV rated voltage is highest among silicon insulated-gate bipolar transistor (IGBT) power semiconductor modules
- Full-SiC technology improves power density and efficiency and enables higher operating frequencies for smaller and more energy-efficient high-voltage power electronics equipment
- Original one-chip structure and new package for high heat dissipation and high heat tolerance
- Chip area reduced drastically thanks to integrating MOSFET and diode on single chip
- Insulating substrate with superior thermal properties and reliable die bonding technology facilitate heat dissipation and heat tolerance
- 3 kVA/cm3 power density is world’s highest among power semiconductor modules rated from 1.7kV to 6.5kV