40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

Efficient Power Conversion Corp. (EPC) has announced the EPC2049 power transistor for use in applications including point of load converters, LiDAR, envelope tracking power supplies, class-D audio, and low inductance motor drives. The EPC2049 has a voltage rating of 40V and maximum RDS(on) of 5mΩ with a 17A pulsed output current.

The chip-scale packaging of The EPC2049 handles thermal conditions far better than the plastic packaged MOSFETs since the heat is dissipated directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package. It measures a mere 2.5 mm x 1.5 mm (3.75 mm2). Designers no longer have to choose between size and performance – they can have both.

“The EPC2049 demonstrates how EPC and gallium nitride transistor technology is increasing the performance and reducing the cost of eGaN® devices. The EPC2049 is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen.” said Alex Lidow, EPC’s co-founder and CEO.

The EPC2049 eGaN FET is priced for 1K units at $2.19 each and is available for immediate delivery from Digi-Key.