Communications Power

40V FETs Claim Best-in-Class Efficiency across Range of Load Conditions

Toshiba America Electronic Components, Inc. (TAEC) today announced the addition of two new N-channel devices to its U-MOS IX-H family of high-efficiency, high-speed switching MOSFETs. The TK3R1E04PL and TK3R1A04PL help designers improve performance and reduce power consumption in motor driver and power supply applications such as dc-dc converters and the secondary-side circuits of ac-dc power supplies.

The TK3R1E04PL (TO-220 package) and TK3R1A04PL (TO-220SIS package) have a maximum VDSS rating of 40V and can operate with gate-source voltages (VGSS) of +/-20V. Maximum dc drain currents for the new devices are 100A and 82A, respectively.

By providing a ‘best-in-class’ trade-off between resistance and capacitance, the TK3R1E04PL and TK3R1A04PL support optimum performance and efficiency in power supply applications. This includes synchronous rectification designs, where the low output charge (QOSS) reduces device contribution to rectification power loss.

Both devices have a low typical on-resistance (RDS(ON)) of just 2.5mΩ (@VGS=10V), and a typical output capacitance (COSS) of 1000pF. These characteristics ensure efficient on-state operation, rapid switching and lower switching losses.

The new MOSFETs operate with channel temperatures up to 175ºC, and Toshiba’s U-MOS IX-H technology ensures stable operation over a wide range of temperatures and load conditions.

The TK3R1E04PL and TK3R1A04PL are available now.